Journal
ELECTROCHIMICA ACTA
Volume 49, Issue 8, Pages 1321-1326Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2003.07.019
Keywords
electrodeposition; compound semiconductor; PbSe; IV-VI; thin films; EC-ALE; upd; quantum confinement; XRD
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PbSe is a IV-VI compound semiconductor with a narrow band gap (0.26 eV), used in photodetectors, photoresistors and photoemitters in the infrared (IR). This paper reports the first instance of PbSe formation by electrochemical atomic layer epitaxy (EC-ALE). The film's composition and structure were characterized using electron probe microanalysis (EPMA) and X-ray diffraction (XRD), respectively. The optical proper-ties were studied via infrared absorption measurements. Films were stoichiometric via EPMA, a Pb/Se ratio of one. XRD indicated the expected rock salt structure for PbSe, and a preferred (2 0 0) orientation. IR adsorption studies, of films grown with 10-50 cycles, showed strong blue shifts of the fundamental absorption edge, which was believed to result from quantum confinement in the thin films. (C) 2003 Elsevier Ltd. All rights reserved.
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