Journal
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
Volume 135, Issue 2-3, Pages 143-147Publisher
ELSEVIER
DOI: 10.1016/j.elspec.2004.02.162
Keywords
X-ray absorption spectroscopy; porous silicon; organic monolayer; NEXAFS
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The organic modification of porous silicon (PSi) has been studied by near edge X-ray absorption tine structures (NEXAFS) spectroscopy. We report the NEXAFS studies of a series of the PSi films modified by organic monolayers, covalently attached to the surface via Si-C and Si-O-C bonds. The C, O, and Si K-edge, and Si L-3,L-2-edge NEXAFS of these PSi films, measured in both the surface sensitive total electron yield (TEY) and the interface and bulk sensitive fluorescence yield (FLY) show that the surface Si-C and Si-O-C bonds are indeed present and that the remaining of the capping molecule remains intact. The results are reported and their implications discussed. (C) 2004 Elsevier B.V. All rights reserved.
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