Journal
IEEE ELECTRON DEVICE LETTERS
Volume 25, Issue 4, Pages 173-175Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2004.824840
Keywords
bulk acoustic wave devices; microresonators; oscillator noise; oscillators; phase noise; resonators; silicon-on-insulator (SOI) technology
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A micromechanical 13.1-MHz bulk acoustic mode silicon. resonator having a high quality factor (Q = 130000) and high maximum drive level (P = 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of A silicon-on-insulatior wafer. A demonstration oscillator based on the new resonator shows single-sideband phase noise of - 138 dBc/Hz at 1 kHz offset from the carrier.
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