Control of fine-structure splitting and biexciton binding in InxGa1-xAs quantum dots by annealing -: art. no. 161301

The distribution of the fine-structure splitting (h) over bar delta(1) and of the biexciton binding energy (h) over bar delta(B) are measured in a series of annealed InAs quantum dots. We find a decrease of (h) over bar delta(1) from 96 mueV to 6 mueV with increasing annealing temperature, indicating a symmetrizing of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole.