Doping dependence of the electronic structure of La1-xNaxMnO3 by resonant X-ray emission and X-ray absorption spectroscopy

The electronic structure of La1-xNaxMnO3 (x = 0, 0.08, and 0.15) thin films is investigated by resonant X-ray emission spectroscopy (RXES) and X-ray absorption spectroscopy (XAS). The excitation energy of the Mn dd transitions is derived. For different carrier doping concentrations, a significant increase in the emission of the low-energy excitations is observed. This finding is consistent with the less-pronounced structural distortion and the increased density of empty e(g)-like majority states in the lower part of the conduction band of the lightly doped samples.