Journal
APPLIED PHYSICS LETTERS
Volume 84, Issue 16, Pages 3085-3087Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1707225
Keywords
-
Categories
Ask authors/readers for more resources
Cd-doped ZnO nanowires in mass production were synthesized by evaporating metal zinc (Zn) and cadmium (Cd) at 900degreesC. Devices using the synthesized nanowires were fabricated on microstructured substrates. Cd-doped ZnO nanowires show a clear positive temperature coefficient of resistance effect, which is quite abnormal as compared to pure ZnO nanowires. At room temperature, resistance change of more than three orders of magnitude was measured when Cd-doped ZnO nanowire device was exposed to a moisture pulse of 95% relative humidity. (C) 2004 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available