Journal
APPLIED PHYSICS LETTERS
Volume 84, Issue 17, Pages 3388-3390Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1705724
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An anodized aluminum oxide nanopore has been used as an x-ray lithography mask to achieve a feature size of similar to35 nm on the polymethylmethacrylate photoresist. The mask was exposed using synchrotron radiation and demonstrates the feasibility of forming large arrays of regular nanostructures. (C) 2004 American Institute of Physics.
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