Journal
APPLIED PHYSICS LETTERS
Volume 84, Issue 17, Pages 3400-3402Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1710716
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- Engineering and Physical Sciences Research Council [GR/R97122/01] Funding Source: researchfish
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Using a thermal-crosslinkable siloxane bisbenzocyclobutene, high quality spin-on (solutionprocessable) gate dielectric layers as thin as 50 nm have been fabricated over the semiconductor layer for polymer field-effect transistors. This was demonstrated on a poly(9,9-dialkylfluorene-alt-triarylamine) as p-channel semiconductor, with a surfactantion-exchanged poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate complex as top-gate electrode. The devices operate at a low voltage with a field-effect mobility of few 10(-4) cm(2)/Vs, and can be continuously operated at 120 degreesC. (C) 2004 American Institute of Physics.
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