Journal
MICROELECTRONIC ENGINEERING
Volume 71, Issue 3-4, Pages 277-282Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2004.01.041
Keywords
nanoimprint; photolithography; near-field effect; nanopatterning
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We propose a new lithography technique that combines the advantages of nanoimprint lithography (NIL) and photolithography. In this combined-nanoimprint-and-photolithography (CNP) technique, we introduce a hybrid mask-mold made from UV transparent material and with a light-blocking metal layer placed on top of the mold protrusions. We demonstrate that the CNP method using such a hybrid mold can achieve resist patterns without residual layer, and the resist patterns can have higher aspect ratio than the feature on the mold. In addition, the photoresist used in the CNP technique can provide higher etching durability compared with thermal plastic polymers that are commonly used in NIL. (C) 2004 Elsevier B.V. All rights reserved.
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