Journal
JOURNAL OF CRYSTAL GROWTH
Volume 265, Issue 3-4, Pages 482-486Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2004.02.017
Keywords
nanostructures; growth from vapor; single crystal growths semiconducting materials
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Ultra-fine ZnO nanowires can be easily synthesized at 800degreesC in air via oxidation of Zn nanowires which is produced by heating ZnO + C mixture at 1100degreesC under a flow of nitrogen gas. Field-emission scanning electron microscope and transmission electron microscope investigations show that the ultra-fine ZnO nanowires grown out from Zn nanowires are high-quality single nanocrystals. The diameter of the ultra-fine ZnO nanowires ranges from 8 to 20 nm and their length is 400 nm-1 mum, having a high aspect ratio of similar to50. The growth mechanism of the ultra-fine ZnO nanowires is discussed. (C) 2004 Elsevier B.V. All rights reserved.
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