Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 16, Issue 5, Pages 1259-1261Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2004.826116
Keywords
II-VI light-emitting diode (LED); mixed color; molecular beam epitaxy (MBE); ZnSe
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II-VI mixed-color light-emitting diodes (LEDs) were prepared by molecular beam epitaxy. At 20 K, it was found that we could achieve a near white light emission from sample 102B quantum well with a Commission Internationale de Enluminure index of x = 0.4 and y = 0.45. By carefully designing the device structure, we should be able to achieve a phosphor free white light LED by using the combinations of ZnCdSe and ZnCdSeTe wells.
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