High-resolution 128 x 96 nitride microdisplay

Matrix-addressable arrays of InGaN micro-light-emitting diodes with 128 x 96 pixels and a resolution of 1200 dpi have been fabricated using a novel sloped sidewall process. The devices have been fabricated on InGaN blue and green wafers, emitting light at the wavelengths of 468 and 508 mu, respectively. A simple circuit, which enables the display of an arrow pattern with similar to60% of the pixels turned on, was used for device testing. At an injection current of 60 mA, the devices deliver 3.3 (blue) and 2.4 mW (green) of output power, corresponding to a luminance of more than 30 000 Cd/m(2). These high-brightness and highly versatile devices are certainly an attractive form of emissive micro-display.