Journal
APPLIED PHYSICS LETTERS
Volume 84, Issue 18, Pages 3441-3443Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1736314
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We demonstrate the deposition of periodic arrays of uniformly sized GaN quantum dots onto a SiOx substrate. The dots are deposited using a nanolithography technique based on a combination of electron-beam-induced chemical vapor deposition and single-source molecular hydride chemistries. Under appropriate deposition conditions, we can deposit uniform dots of height 5 nm and full widths at half-maxima of 4 nm. The dot size is controlled by the spatial distribution of secondary electrons leaving the substrate surface. The smallest, most uniform void-free dots are created via nanolithography of molecules adsorbed on the substrate surface. (C) 2004 American Institute of Physics.
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