Journal
APPLIED PHYSICS LETTERS
Volume 84, Issue 18, Pages 3663-3665Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1738938
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We report blue-purple pn-junction light-emitting diodes (LEDs) with a-plane GaN-InGaN multiple quantum well active region. The LEDs were grown over r-plane sapphire substrates. Our study has shown the low pump intensity photoluminencence and electroluminescence to be dominated by emission from the band-tail states which then saturates rapidly giving rise to band-edge emission. (C) 2004 American Institute of Physics.
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