Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 16, Issue 17, Pages S1721-S1732Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/16/17/014
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The possibility is discussed that, independent of the polytype, large electronic correlation effects give rise to semiconducting SiC surfaces with [111] or [0001] orientations. The most important surface translational symmetries (root3 x root3)R30degrees and 3 x 3 are considered. The discussion is based on the detailed knowledge of the surface atomic geometries and the electronic structures derived for these geometries using a local density approximation for exchange and correlation. It is argued that the resulting half-filled, weakly dispersive dangling-bond bands within the fundamental gaps are split according to a Hubbard interaction parameter U, and that the surface systems undergo a Mott-Hubbard transition. Such a physical picture provides a qualitatively correct account of the single-particle excitation spectra either inferred from angle-resolved photoemission and inverse photoemission experiments or obtained from scanning tunnelling spectroscopy. The gap opening and hence the Hubbard U parameter are discussed in terms of their dependence on the surface reconstruction as well as the SiC polytype.
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