4.6 Article Proceedings Paper

Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells

Journal

JOURNAL OF APPLIED PHYSICS
Volume 95, Issue 11, Pages 6714-6716

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.1667433

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Ni-Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclockwise, of vortical magnetizations of the Ni-Fe asymmetric ring dots. This control facilitates applying ring dots to the magnetic random access memories. (C) 2004 American Institute of Physics.

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