Journal
MATERIALS TODAY
Volume 7, Issue 6, Pages 42-51Publisher
ELSEVIER SCI LTD
DOI: 10.1016/S1369-7021(04)00288-3
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- Japan Science and Technology Agency
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This article reviews transparent oxide optoelectronic devices based on our efforts focusing on transparent thin-film transistors fabricated from single-crystalline films of InGaO3(ZnO)(5) with a natural superlattice structure, near-ultraviolet (UV) emitting diodes composed of heteroepitaxially grown p-type SrCu2O2 and n-type ZnO, and single-crystalline NiO and ZnO pn-heterojunction diode UV detectors.
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