Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 83, Issue 1, Pages 81-90Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2003.11.030
Keywords
thin film; GaAs solar cell; epitaxial lift-off
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Thin film GaAs solar cells, separated from their substrate using the weight-induced epitaxial lift-off technique, were compared with conventional cells on a substrate. The thin film cells can be illuminated from both sides using a mirror. The thickness of the p-type GaAs layer, which is the base layer for front illumination and the emitter layer for rear illumination, was varied between 0.25 and 2.5 mum. For both front and rear illumination, the cell efficiency shows a maximum at a thickness of 1.5 mum. The rear illuminated cell current is only 10% lower than for front illumination. Light reflection in the thin film cell enhances the external quantum efficiency and the collection efficiency in the higher wavelength region from 0.84 to 0.90 and from 0.82 to 0.95, respectively. (C) 2003 Elsevier B.V. All rights reserved.
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