☆ 4.7 Article

Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu

SCRIPTA MATERIALIA (2004)

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Journal

SCRIPTA MATERIALIA
Volume 50, Issue 11, Pages 1407-1411

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2004.02.026

Keywords

electrical resistivity; nanocrystalline Cu; relaxation of grain boundary and magnetron sputtering

Categories

Nanoscience & Nanotechnology Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering

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Electrical resistivity of grain boundaries (GBs) was determined in nanocrystalline (nc) Cu specimens prepared by magnetosputtering and subsequent annealing. Extrapolating the microstrain dependence of GB resistivity, we derived electrical resistivity of GBs in a fully-relaxed state in Cu, being 2.04 x 10(-16) Omegam(2). (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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