Effect of annealing on ZnO thin films grown on (001) silicon substrate by low-pressure metalorganic chemical vapour deposition

ZnO thin films were deposited on (001) Si substrate by low-pressure metalorganic chemical vapour deposition. Thermal annealing was performed at 800 degreesC in air for an hour. The effects of annealing on the surface morphology, stoichiometric ratio, structural and optical properties of ZnO films were investigated using scanning electron microscopy, x-ray photoemission spectroscopy (XPS), x-ray diffraction, Raman spectra and photoluminescence spectra. The resistivity of ZnO film increased to 1.25 x 10(2) Omega cm after annealing. It was found that the quality of ZnO film could be improved through annealing.