Journal
OPTICS EXPRESS
Volume 12, Issue 12, Pages 2774-2780Publisher
OPTICAL SOC AMER
DOI: 10.1364/OPEX.12.002774
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We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening. (C) 2004 Optical Society of America.
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