Charge carrier mobility in doped disordered organic semiconductors

A model of hopping charge carrier transport in a doped disordered organic semiconductor is suggested. It is shown that the doping efficiency can be high in such materials even if the activation energy for dopant formation is comparatively large. This result can explain high levels of accidental doping that are often observed in amorphous organic materials. (C) 2004 Elsevier B.V. All rights reserved.