Journal
APPLIED SURFACE SCIENCE
Volume 231, Issue -, Pages 698-703Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2004.03.190
Keywords
BiCMOS; SiGe; carbon; SIMS; cesium
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In this paper, we describe our utilization of SIMS to support development of new SiGe:C structures for BiCMOS industrial processes. The goal is to perform quantitative germanium and carbon depth profiles in test areas of 300 mum x 300 mum with optimum depth resolution and detection limits. (C) 2004 Elsevier B.V. All rights reserved.
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