Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate

The defect-enhanced blue-green photoluminescence (PL) and electroluminescence (EL) of a metal-oxide-semiconductor (MOS) diode made on 500-nm-thick Si-ion-implanted SiO2 (SiO2:Si+) on Si substrate are demonstrated. A multienergy/multidose implantation and 1100 degreesC annealing process is employed to enhance the 415-455 nm PL contributed by weak oxygen bond and neutral oxygen vacancy defects. The Ag/SiO2:Si+/n-Si/Ag MOS diode exhibits a negative-differential resistance effect with threshold field strength of 300 kV/cm. The threshold pulsed current of deep-blue EL from Ag/SiO2:Si+/n-Si/Ag diode is 280 mA (or 3 V), which turns to white-light emission at saturation current of 680 mA and further shifts to green as the biased current increases up to 3 A. The 3 dB power decay within 3 h is also observed. (C) 2004 American Institute of Physics.