Journal
APPLIED SURFACE SCIENCE
Volume 318, Issue -, Pages 74-78Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2014.01.013
Keywords
Graphene oxide; Modified Hummers method; Thin film transistor
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Funding
- Kahramanmaras Sutcu Imam University [2012/2-7D]
- National Research Fellowship Programme [TUBITAK-2233]
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We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV-vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and I-on/I-off of GO-TFT were found to be 0.105 cm(2) V-1 s(-1), -8.7V, 4.03 V/decade and 10, respectively. (C) 2014 Elsevier B.V. All rights reserved.
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