Hopping conduction in In-doped CuO thin films

Electrical transport properties of undoped and In-doped CuO thin films (1, 5 and 10 at. %) are investigated by mean of resistivity in the temperature range of 115-300 K. Electrical transport mechanism of films is explained on the basis of the variable-range hopping (VRH) conduction. Upon doping, appreciable changes are found in resistivity. Temperature dependent resistivity shows a complex correlation with increasing In concentration. This situation is well explained by fluctuations in the hopping distance and the density of states at the Fermi level. (C) 2014 Elsevier B.V. All rights reserved.