Journal
IEEE ELECTRON DEVICE LETTERS
Volume 25, Issue 7, Pages 507-509Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2004.831219
Keywords
amorphous semiconductors; chalcogenide; crystal growth; nonvolatile memories; phase-change memory (PCM)
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The phase transformation in chalcogenide-based nonvolatile memories is studied by cell electrical characterization. The cell state (amorphous, crystalline, or mixed) is changed by applying electrical pulses, then the cell resistance R and the current-voltage characteristics are measured. From the analysis of the electrical parameters of the cell, we provide evidence for a stacked-like phase distribution in the active layer. Results are discussed with reference to the thermal profile during the program pulse in the chalcogenide layer.
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