Journal
MICROELECTRONIC ENGINEERING
Volume 75, Issue 1, Pages 54-62Publisher
ELSEVIER
DOI: 10.1016/j.mee.2003.09.011
Keywords
porous low-k films; interconnects; adhesion; stresses; creep; plasticity
Ask authors/readers for more resources
Severe mechanical loads during multilevel metallization manufacturing, such as repeated thermal cycles and chemical-mechanical planarization processes, can induce high stresses in interconnect structures. It is shown that such stresses in ultra-low-k-based interconnect structures can experience relaxation either through interfacial adhesion failure or through the compliance of the porous dielectrics. Adhesion quality can be improved by careful interface engineering aimed at enhancing both the fundamental and the practical work of adhesion. However, the low stiffness of porous ultra-low-k films limits the range of loads in which mechanical responses remain elastic. Moreover, such films can show a time-dependent response (creep). Therefore, stresses in device fabrication and operation need to be kept under control to ensure structural stability. (C) 2004 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available