Journal
APPLIED SURFACE SCIENCE
Volume 289, Issue -, Pages 529-532Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2013.11.030
Keywords
Through holes; Laser affected zones; Chemical selective etching; Femtosecond laser; 6H-SiC
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Funding
- National Natural Science Foundation of China (NSFC) [91123028, 61235003]
- National Basic Research Program of China (973 Program) [2012CB921804]
- Center for Dielectric Research (ICDR) in Xi'an Jiaotong University
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By using 800-nm femtosecond laser irradiation and chemical selective etching, through holes were fabricated in a 350-pm silicon carbide sample. The morphology and chemical compositions of the through holes were characterized using scanning electronic microscopy equipped with an energy dispersive X-ray spectroscopy. The formation mechanism of the holes was attributed to the chemical reactions of laser affected zones with mixed solution of hydrofluoric acid and nitric acid. Results showed that chemical compositions of the area around the holes were silicon and carbon which were the same as those of the original one. Furthermore, the influences of number of pulses and pulse energy on the depth and diameter of the holes were investigated. (C) 2013 Elsevier B.V. All rights reserved.
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