Journal
APPLIED SURFACE SCIENCE
Volume 289, Issue -, Pages 27-32Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2013.10.071
Keywords
ZnO; Atomic layer deposition; Stress; Band gap; Resistivity; Photoluminescence
Categories
Funding
- Fonds der chemischen Industrie (VCI) Frankfurt, Germany
- University of Cologne
- framework of German-South African bilateral collaboration through the International Bureau of BMBF [SUA 09/047]
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ZnO thin films with high conductivity and high transparency were grown on Si (1 0 0) substrates by atomic layer deposition. Thickness dependent (43-225 nm) changes in crystallographic, optical and electrical properties are reported and discussed. Increase in film thickness caused a decrease in the bandgap by relaxation of stress in the plane of the film and led to an improvement in crystallinity and conductivity. The optical studies showed a noticeable change towards the contribution of excitonic and phonon replica to the UV-emission band. (C) 2013 Elsevier B.V. All rights reserved.
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