Journal
APPLIED SURFACE SCIENCE
Volume 320, Issue -, Pages 263-266Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2014.09.021
Keywords
Anomalous Hall effect; Perpendicular magnetic anisotropy; Interface chemical states; X-ray photoelectron spectroscopy
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Funding
- Ph.D. Programs Foundation of Ministry of Education [20120006130002]
- PCSIRT
- Natural Science Foundation of China [51331002, 51371027]
- Beijing Laboratory of Metallic Materials and Processing for Modern Transportation
- Fundamental Research Funds for the Central Universities [FRF-SD-12-011A]
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Chemically manipulated anomalous Hall effect (AHE) and perpendicular magnetic anisotropy (PMA) have been studied in MgO/[Co/Pt](3)/MgO multilayers by introducing a Mg metal layer between the Co layer and the top MgO layer. It is shown that the saturation anomalous Hall resistivity (pAH) and effective magnetic anisotropy (rho(AH)) are 125% and 26% larger than those in the multilayers without Mg insertion, respectively. The X-ray photoelectron spectroscopy (XPS) analysis shows that the enhancement of AHE and PMA is primarily ascribed to effective control of chemical states at the Co/MgO interface. (C) 2014 Elsevier B.V. All rights reserved.
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