Journal
APPLIED SURFACE SCIENCE
Volume 289, Issue -, Pages 160-166Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2013.10.126
Keywords
Ge2Sb2Te5; Morphology; Phase change; Picosecond laser
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Funding
- National Natural Science Foundation of China [51271006]
- Beijing Municipal Natural Science Foundation [2132012]
- General project of Beijing Municipal Education Commission [KM201210005020]
- State Key Laboratory of Solidification Processing in NWPU [5KL5P201205]
- Basic Research Fund in BJUT [X4101011201101]
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The morphology and crystalline phase characteristics of amorphous Ge2Sb2Te5 films irradiated by a picosecond laser were investigated by 3D surface profiler, atomic force microscopy (AFM) and transmission electron microscopy (TEM) integrated with selected area electron diffraction (SAED). The laser irradiated spot was divided into strong ablation area, gentle ablation area, melting area and irradiation area. By theoretical calculation, the ablation and melting thresholds were determined to be 173.05 mJ cm(-2) and 99.19 mJ cm(-2) respectively. Meantime, the local fine morphologies of the ablation and melting areas were shown and analyzed. We also studied the irradiation area which was made up by the non-phase-change area and phase-change area. In the phase-change area, crystalline phase was determined to be face-centered cubic structure and crystalline phase characteristics for films with different thicknesses were discussed. (C) 2013 Elsevier B.V. All rights reserved.
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