Journal
APPLIED SURFACE SCIENCE
Volume 266, Issue -, Pages 332-336Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2012.12.020
Keywords
Graphene oxide; Optoelectronic; Responsivity
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Funding
- National Natural Science Foundation of China [51002129, 51172191, 11074211]
- National Basic Research Program of China [2012CB921303]
- Doctoral Program of Higher Education [200805300003]
- China Postdoctoral Science Foundation [20100480068]
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The photoresponse properties of solution processed graphene oxide (GO) ranged from ultraviolet-visible-near infrared regime are studied. Photoelectrochemical results indicate that the as-prepared GO devices have excellent sensitivity, high-speed and superior reproducibility as a visible and near infrared photodetector. Especially, the responsivity and external quantum efficiency are found to be about 95.8 mA/W and 26.2%, respectively, for incident wavelength of 455 nm at 0.8 V bias voltage. Resulting from the degradation of GO under UV irradiation, the GO devices exhibit unstable photoresponse performance, as well as high UV photosensitivity. (c) 2012 Elsevier B.V. All rights reserved.
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