Journal
APPLIED SURFACE SCIENCE
Volume 284, Issue -, Pages 930-935Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2013.08.055
Keywords
Silicon carbide; Anisotropic wetting properties; Contact angle
Categories
Funding
- National Nature Science Foundation of China [51275473]
- Tribology Science Fund of State Key Laboratory of Tribology, China [SKLTKF11B01]
Ask authors/readers for more resources
Wettability on silicon carbide (SiC) substrates with laser processing micro-groove-liked structures was introduced to discuss the anisotropic wetting properties. The surface topography and chemical composition, on the polished and textured substrates were measured by energy dispersive X-ray analysis (EDX) and Raman measurement system (RS), respectively. Water contact angles in both parallel and perpendicular direction to grooves were also measured. Results show that chemical composition on the laser processed surface was almost the same with that on the polished surface, except for the content of O increased and the Si decreased. The contact angle in the parallel direction was larger than the perpendicular direction which indicates that the anisotropy was significant on the groove-liked textures. The difference of contact angle value between these two directions ranged from 15.7 degrees to 47.4 degrees. While the difference would be less than 24 degrees, when both groove spacing and width were larger than 100 mu m. The less the size of groove spacing and width was, the more obvious the anisotropy became. The findings may produce a promising way to reduce water adsorption on the gas seal surfaces. (C) 2013 Elsevier B. V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available