Journal
APPLIED SURFACE SCIENCE
Volume 282, Issue -, Pages 390-395Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2013.05.141
Keywords
ZnO; Thermal; Plasma-enhanced; ALD; Resistive switching
Categories
Funding
- Ministry of Science and Technology of China through the National Key Technology Support Program [2009BAG12A07]
- National Natural Science Foundation of China [61150110485]
- Zhejiang Province Innovation Group Program [2011R09010]
- NSF Key Program [Z1110168]
- Tang Zhongyin Trust
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In this study, we report on a systematical investigation on the crystal structure, optical and electrical properties of ZnO thin films grown by thermal and remote plasma-enhanced atomic layer deposition (Thermal ALD and PEALD) and their applications in resistive switching devices. The conductivity of ZnO films grown by Thermal ALD at 200 degrees C is similar to 169 S/cm, demonstrating a good potential for the applications in transparent conducting films. It is possible to deposit ZnO films with good structural quality and few defects at lower temperatures by PEALD. The Al/PEALD-ZnO/Pt devices show good resistive switching properties, while the devices using Thermal ALD ZnO films failed to show any resistive switching behavior, but a perfect Ohmic behavior. The thickness ZnO active layer has a strong effect on the device properties. When the thickness of ZnO film is similar to 23 nm, the high state-resistance to low state-resistance ratio maintains at larger than 103, while the current compliance for safe operation is similar to 1 mA much smaller than those for devices with thick active layers. The results have demonstrated the PEALD grown ZnO films have the excellent properties for the applications in high-density 3D resistive random access memory. (C) 2013 Elsevier B. V. All rights reserved.
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