Journal
APPLIED SURFACE SCIENCE
Volume 282, Issue -, Pages 538-543Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2013.06.007
Keywords
beta-Bi2O3 films; Nanoporous; AFM; Photoelectrochemical; IPCE
Categories
Funding
- 863 project [2006AA05Z102]
- China Academy of Engineering Physics and Sichuan University [XTCX2011001]
- Sichuan Provincial Department of Science and Technology [2013FZ0034]
- Specialized Research Fund for the Doctoral Program of Higher Education [20110181110003]
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Bi2O3 thin films were successfully prepared on fluorine doped SnO2 substrate by the sol-gel route. The effects of annealing temperature on the film structure and photoelectrochemical (PEC) performance were also discussed. Bi2O3 thin films were characterized by conventional techniques. X-ray diffraction (XRD) results show the 450 degrees C annealed film exhibits beta-phase structure with the best crystallinity. Scanning electron microscope (SEM) analysis indicates that the surface morphology varies with changing the annealing temperature. The film surface becomes nanoporous at high annealing temperature. Atomic force microscope (AFM) result indicates that the grains on the surface still exhibit close-packed growth in the nanoscale, even though there are many holes in the film surface. The photoelectrochemical performance was evaluated by incident photon-to-current conversion efficiency (IPCE). The IPCE reaches 10.5% at 400 nm (25.5% at 350 nm) without any additional potential vs. Ag/AgCl in 1 M NaOH solution. (C) 2013 Elsevier B.V. All rights reserved.
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