Journal
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
Volume 40, Issue 4, Pages 1025-1030Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIA.2004.830794
Keywords
device simulation; experiment result; insulated gate bipolar transistor (IGBT); series connection; voltage balance
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This paper presents a new method for balancing voltages of series-connected insulated gate bipolar transistors (IGBTs). This method can be implemented only by adding simple circuits to the gate drive system of the IGBTs, and its effect of balancing the IGBT's collector-emitter voltages during the switching transients is remarkable. This principal strategy and experimental results with series-connected IGBTs are first described. After that, further experimental results are shown from the switching tests of four 2.5-kV flat-packaged IGBTs connected in series. Through the switching tests, superior characteristics of the proposed method have been confirmed.
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