Effect of doping on the dielectric properties of cerium oxide in the microwave and far-infrared frequency range

Cerium oxide (CeO(2)) has been prepared as a ceramic dielectric resonator by a conventional solid-state ceramic route. The sintered CeO(2) has a high dielectric quality factor (Qxf), Q value of 10 000 at 6 GHz with a relative permittivity (epsilon') of 23, and temperature coefficient of resonant frequency (tau(f)) of -53 ppm/degreesC. The Q value increases to 20 000 at 6 GHz when the CeO(2) is doped with 1 mol% CaCO(3). Higher levels of CaCO(3) doping lowers the Q and epsilon' values and simultaneously decreases tau(f), TiO(2) doping decreases tau(f) and slightly increases epsilon', but deceases the Q value. The Q value of pure CeO(2) increases to 105 000 at a frequency of 5.58 GHz when it is cooled to 30 K, whereas Q approximate to 85 000 at 5.48 GHz for 1-mol%-CaCO(3)-doped CeO(2) at 30 K.