Journal
APPLIED SURFACE SCIENCE
Volume 258, Issue 19, Pages 7678-7682Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2012.04.120
Keywords
Cu2ZnSnS4; Thin film; SILAR; Solar cell
Categories
Funding
- Natural Science Foundation of Hunan Province in China [09JJ3110]
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Earth-abundant Cu2ZnSnS4 is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu2ZnSnS4 (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu2ZnSnS4 and the p-type conductivity with a carrier concentration in the order of 10(18) cm(-3) and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells. (C) 2012 Elsevier B.V. All rights reserved.
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