Journal
APPLIED SURFACE SCIENCE
Volume 258, Issue 24, Pages 9589-9592Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2012.05.152
Keywords
Magnetic films; X-ray photoelectron spectroscopy; MgOx
Categories
Funding
- National Science Foundation of China [51101012, 50971021, 50901007, 50871014, 50831002]
- Fundamental Research Funds for the Central Universities [FRF-SD-12-011A]
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Ta/MgOx/Ni81Fe19/MgOx/Ta films were prepared by magnetron sputtering. The anisotropic magnetoresistance (AMR) increases dramatically after annealing. The chemical states of Ta and MgOx at the interface of the NiFe/MgOx/Ta films, which were prepared at the different technological conditions, were analyzed by X-ray photoelectron spectroscopy (XPS). The results show that the AMR of the films is related to the chemical states of MgOx. The chemical states of Mg are different when MgOx is prepared at different technological conditions. Therefore, increasing the AMR is beneficial when more Mg2+ ions are present in the MgOx films. (C) 2012 Elsevier B. V. All rights reserved.
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