4.7 Article

Molybdenum thin film deposited by in-line DC magnetron sputtering as a back contact for Cu(In,Ga)Se2 solar cells

Journal

APPLIED SURFACE SCIENCE
Volume 257, Issue 22, Pages 9682-9688

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2011.06.101

Keywords

Mo metal back contact; CIGS solar cell; In-line DC sputtering; Sputtering power; Working pressure

Funding

  1. Ministry of Education, Science and Technology [2010-0009454]
  2. Kyungwon University
  3. National Research Foundation of Korea [2010-0009454] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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In this paper, we reported the effect of the power and the working pressure on the molybdenum (Mo) films deposited using an in-line direct current (DC) magnetron sputtering system. The electrical and the structural properties of Mo film were improved by increasing DC power from 1 to 3 kW. On the other side, the resistivity of the Mo films became higher with the increasing working pressure. However, the adhesion property was improved when the working pressure was higher. In this work, in order to obtain an optimal Mo film as a back metal contact of Cu(In,Ga)Se-2 (CIGS) solar cells, a bilayer Mo film was formed through the different film structures depending on the working pressure. The first layer was formed at a high pressure of 12 mTorr for a better adhesion and the second layer was formed at a low pressure of 3 mTorr for a lower resistivity. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.

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