Journal
APPLIED SURFACE SCIENCE
Volume 258, Issue 4, Pages 1390-1394Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2011.09.083
Keywords
BiFeO3/Zn1-xMnxO; Bilayered thin films; Magnetron sputtering; Electrical properties
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Funding
- National Natural Science Foundation of China [51102173]
- Sichuan University [2082204144033]
- Fundamental Research Funds for the Central Universities
- National University of Singapore
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BiFeO3/Zn1-xMnxO (x = 0-0.08) bilayered thin films were deposited on the SrRuO3/Pt/TiO2/SiO2/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO3/Zn1-xMnxO. BiFeO3/Zn1-xMnxO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2P(r) similar to 121.0-130.6 mu C/cm(2) was measured for BiFeO3/Zn1-xMnxO. BiFeO3/Zn1-xMnxO (x = 0.04) bilayer exhibits a highest M-s value of similar to 15.2 emu/cm(3), owing to the presence of the magnetic Zn0.96Mn0.04O layer with an enhanced M-s value. (C) 2011 Elsevier B.V. All rights reserved.
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