Journal
APPLIED SURFACE SCIENCE
Volume 257, Issue 9, Pages 4026-4030Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2010.11.169
Keywords
Solar cell; Cu(In1-xGax)Se-2; Al:ZnO layer thickness; Efficiency
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Funding
- Grants-in-Aid for Scientific Research [22656004] Funding Source: KAKEN
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Structural, electrical and optical properties of Al doped ZnO (Al:ZnO) thin film of various thicknesses, grown by radio-frequency magnetron sputtering system were studied in relation to the application as a window layer in Cu(In1-xGax)Se-2 (CIGS) thin film solar cell. It was found that the electrical and structural properties of Al:ZnO film improved with increasing its thickness, however, the optical properties degraded. The short circuit current density, J(sc) of the fabricated CIGS based solar cells was significantly influenced by the variation of the Al:ZnO window layer thickness. Best efficiency was obtained when CIGS solar cell was fabricated with electrically and optically optimized Al:ZnO window layer. (C) 2010 Elsevier B. V. All rights reserved.
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