Journal
APPLIED SURFACE SCIENCE
Volume 257, Issue 18, Pages 8110-8112Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2011.04.118
Keywords
Valence band offset; GaN/diamond heterojunction; XPS; Conduction band offset
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Funding
- 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
- Special Funds for Major State Basic Research Project (973 program) of China [2006CB604907]
- National Science Foundation of China [60506002, 60776015]
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XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38 +/- 0.15 eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43 +/- 0.15 eV was obtained. (C) 2011 Elsevier B.V. All rights reserved.
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