Journal
VACUUM
Volume 75, Issue 2, Pages 183-188Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2004.01.081
Keywords
ITO films; annealing temperature; rf magnetron sputtering
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Indium, tin oxide (ITO) films were deposited on glass substrates by rf magnetron sputtering using a ceramic target (In2O3-SnO2, 90-10 wt%) without extra heating. The post annealing was done in air and in vacuum, respectively. The effects of annealing on the structure, surface morphology, optical and electrical properties of the ITO films were studied. The results show that the increase of the annealing temperature improves the crystallinity of the films, increases the surface roughness, and improves the optical and electrical properties. The transmittance of the films in visible region is increased over 90% after the annealing process in air or in vacuum. The resistivity of the films deposited is about 8.125 x 10(-4) Omega cm and falls down to 2.34 x 10(-4) Omega cm as the annealing temperature is increased to 500degreesC in vacuum. Compared with the results of the ITO films annealed in air, the properties of the films annealed in vacuum is better. (C) 2004 Elsevier Ltd. All rights reserved.
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