Journal
APPLIED SURFACE SCIENCE
Volume 257, Issue 20, Pages 8747-8751Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2011.05.034
Keywords
XPS; Atomic layer deposition; Al2O3; GaSb; High mobility substrates
Categories
Funding
- FCRP Materials Structures and Devices (MSD) Center
- Semiconductor Research Corporation Nanoelectronics Research Initiative
- National Institute of Standards and Technology through the Midwest Institute for Nanoelectronics Discovery (MIND)
- National Science Foundation (NSF) [0925844]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0925844] Funding Source: National Science Foundation
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GaSb(001) was treated with (NH4)(2)S-x and the evolution of the interfacial chemistry was investigated, in situ, with monochromatic X-ray photoelectron spectroscopy (XPS), following heat treatment and exposure to trimethylaluminum (TMA) and deionized water (DIW) in an atomic layer deposition reactor. Elemental Sb (Sb-Sb bonding) as well as Sb3+ and Sb5+ chemical states were initially observed at the native oxide/GaSb interface, yet these diminished below the XPS detection limit after heating to 300 degrees C. No evidence of Ga-Ga bonding was observed whereas the Ga1+/Ga-S chemical state was robust and persisted after heat treatment and exposure to TMA/DIW at 300 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
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