Journal
OPTICS COMMUNICATIONS
Volume 237, Issue 4-6, Pages 363-369Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.optcom.2004.04.012
Keywords
energy band structure; numerical simulation; III-V semiconductors
Categories
Ask authors/readers for more resources
Numerical simulation based on first-principles calculations is applied to study the structural characteristics and band-energy properties of the zincblende InxGa1-xN. The deviation parameter of the lattice constant is determined to be -0.004 Angstrom. A band gap bowing parameter of 1.890 +/- 0.097 eV is obtained with the equilibrium lattice constant and 1.857 +/- 0.093 eV is obtained with the lattice constant derived from Vegard's law. (C) 2004 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
