Journal
APPLIED SURFACE SCIENCE
Volume 257, Issue 9, Pages 4082-4090Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2010.11.179
Keywords
InGaAs; Sulphur passivation; Photoemission; Surface roughness; Native oxide; Ammonium sulphide; Chemical passivation
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Funding
- MSD Focus Center
- Focus Center Research Program (FCRP)
- Semiconductor Research Corporation entity
- National Science Foundation US-Ireland [ECCS-0925844]
- IRC-SET
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0925844] Funding Source: National Science Foundation
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The passivation of III-V semiconductor materials with sulphur is widely reported to reduce interface state defects and improve semiconductor device performance. The most common approach utilises ammonium sulphide ((NH4)(2)S), however there are wide variations in the reported processing parameters involved in this procedure. This study provides a comprehensive review of the various parameters used as well as determining the optimal processing conditions in terms of sample pre-treatments, temperature of the (NH4)(2)S solution, length of time the sample is in the solution and (NH4)(2)S concentration, by measuring the level of residual native oxides and surface roughness by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. (C) 2010 Elsevier B. V. All rights reserved.
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