Journal
APPLIED SURFACE SCIENCE
Volume 257, Issue 20, Pages 8490-8492Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2011.04.139
Keywords
Cu2ZnSnSe4; Electrodeposition; Selenization; Thin films; Solar energy materials
Categories
Funding
- Science and Technology Support Projects in Gansu Province [0708GKCA037]
- Natural Science Foundation of Anhui Province [11040606Q45]
- Hefei University of Technology [2010HGBZ0604]
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A novel technique for growth of high quality Cu2ZnSnSe4 (CZTSe) thin films is reported in our work. The CZTSe thin films were fabricated onto Mo layers by co-electroplating Cu-Zn-Sn precursors followed by annealing in the selenium vapors at the substrate temperature of 550 degrees C. The morphology and structure of CZTSe thin films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum, respectively. The results revealed that the single phase was in the CZTSe thin films, and the other impurities such as ZnSe and Cu2SnSe3 were not existed though they were difficult to distinguish both from EDS and XRD. (C) 2011 Elsevier B.V. All rights reserved.
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