Nonlithographic SiO2 nanodot arrays via template synthesis approach

We present a method for fabricating SiO2 nanodot arrays through pattern transfer of self-organized tantalum oxide hard masks on to a Si wafer. Tantalum oxide nanopillar arrays are formed at the bottom of anodic aluminum oxide by electrochemical anodization of the Al/Ta films on a Si wafer. Then the tantalum oxide nanopillars were used as hard masks for formation of SiO2, nanostructures. Ion milling was used for the pattern transfer. The density and diameter of the SiO2 nanodot arrays could be controlled by varing the anodizing a conditions. The average diameters and areal density of prepared SiO2 nanodisks were 68 nm and 10(10)/cm(2), respectively. Through this approach, it is expected that a wide variety of nanodisk arrays over large areas can be prepared.